Scanning tunneling microscopy/spectroscopy on MoS2 embedded nanowire formed in CVD-grown Mo1−xWxS2 alloy
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منابع مشابه
Microscopic basis for the band engineering of Mo1−xWxS2-based heterojunction
Transition-metal dichalcogenide layered materials, consisting of a transition-metal atomic layer sandwiched by two chalcogen atomic layers, have been attracting considerable attention because of their desirable physical properties for semiconductor devices, and a wide variety of pn junctions, which are essential building blocks for electronic and optoelectronic devices, have been realized using...
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The effective synthesis of two-dimensional transition metal dichalcogenides alloy is essential for successful application in electronic and optical devices based on a tunable band gap. Here we show a synthesis process for Mo1-xWxS2 alloy using sulfurization of super-cycle atomic layer deposition Mo1-xWxOy. Various spectroscopic and microscopic results indicate that the synthesized Mo1-xWxS2 all...
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Dopants in two-dimensional dichalcogenides have a significant role in affecting electronic, mechanical, and interfacial properties. Controllable doping is desired for the intentional modification of such properties to enhance performance; however, unwanted defects and impurity dopants also have a detrimental impact, as often found for chemical vapor deposition (CVD) grown films. The reliable id...
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Over the past years, transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. An exciting development is the recent success in “engineering” crystal phases of TMD compounds during the growth due to their polymorphic character. Here, we report an electric field induced reversible enginee...
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Heterostructures of dissimilar 2D materials are potential building blocks for novel materials and may enable the formation of new (photo)electronic device architectures. Previous work mainly focused on supporting graphene on insulating wide-band gap materials, such as hex-BN and mica. Here we investigate the interface between zero-band gap semiconductor graphene and band-gap semiconductor MoS2 ...
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تاریخ انتشار 2017